AlGaAs Anode Heterojunction PIN Diodes
نویسندگان
چکیده
This paper describes the development of a heterojunction AlGaAs/GaAs PIN diode as a revolutionary improvement as compared to the homojunction GaAs PIN diode commonly used in microwave systems for commercial and military applications. In a heterojunction device the injected carriers from the junction are confined by the bandgap discontinuity between the AlGaAs/GaAs layers. This confinement effectively reduces the series resistance within the I-region of a PIN diode. Simulations of both single and double heterojunction PIN diodes predict a significant improvement in the return loss and insertion loss as compared to an equivalent GaAs PIN structure. In particular, the single heterojunction PIN diode, when simulated at a bias of 10 ma, indicates a factor of two reduction in high frequency insertion loss.
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